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| september 2002 ? 2002 fairchild semiconductor corporation fds6994s rev c(w) fds6994s dual notebook power supply n - channel powertrench ? ? ? ? syncfet ? general description the fds6994s is designed to replace two single so-8 mosfets and schottky diode in synchronous dc:dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. fds6994s contains two unique 30v, n-channel, logic level, powertrench mosfets designed to maximize power conversion efficiency. the high-side switch (q1) is designed with specific emphasis on reducing switching losses while the low- side switch (q2) is optimized to reduce conduction losses. q2 also includes an integrated schottky diode using fairchild?s monolithic syncfet technology. features ? q2 : optimized to minimize conduction losses includes syncfet schottky body diode 8.2a, 30v r ds(on) = 15 m ? @ v gs = 10v r ds(on) = 17.5 m ? @ v gs = 4.5v ? q1 : optimized for low switching losses low gate charge (85.5 nc typical) 6.9a, 30v r ds(on) = 21 m ? @ v gs = 10v r ds(on) = 26 m ? @ v gs = 4.5v s2 so-8 g2 s1 g1 d2 d2 d1 d1 4 3 2 1 5 6 7 8 q1 q2 absolute maximum ratings t a = 25c unless otherwise noted symbol parameter q2 q1 units v dss drain-source voltage 30 30 v v gss gate-source voltage 16 16 v i d drain current - continuous (note 1a) 8.2 6.9 a - pulsed 30 20 p d power dissipation for dual operation 2 w power dissipation for single operation (note 1a) 1.6 (note 1b) 1 (note 1c) 0.9 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 78 c/w r jc thermal resistance, junction-to-case (note 1) 40 c/w package marking and ordering information device marking device reel size tape width quantity fds6994s fds6994s 13? 12mm 2500 units fds6994s
fds6994s rev c (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 1 ma v gs = 0 v, i d = 250 ua q2 q1 30 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 1 ma, referenced to 25 c i d = 250 a, referenced to 25 c q2 q1 23 24 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v q2 q1 500 1 a i gss gate-body leakage v gs = 16 v, v ds = 0 v all 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma v ds = v gs , i d = 250 a q2 q1 1 1 1.5 1.9 3 3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 1 ma, referenced to 25 c i d = 250 ua, referenced to 25 c q2 q1 ?2 ?5 mv/ c v gs = 10 v, i d = 8.2a v gs = 10 v, i d = 8.2 a, t j = 125 c v gs = 4.5 v, i d = 7.6 a q2 10 15 11 15 24 17.5 s(on) static drain-source on-resistance v gs = 10 v, i d = 6.9 a v gs = 10 v, i d = 6.9 a, t j = 125 c v gs = 4.5 v, i d = 6.2 a q1 16 24 19 21 33.5 26 m ? i d(on) on-state drain current v gs = 10 v, v ds = 5 v q2 q1 30 20 a g fs forward transconductance v ds = 10 v, i d = 8.2 a v ds = 10 v, i d = 6.9 a q2 q1 42 41 s dynamic characteristics c iss input capacitance q2 q1 2815 800 pf c oss output capacitance q2 q1 540 205 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz q2 q1 210 90 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz q2 q1 1.7 2.3 ? fds6994s fds6994s rev c (w) electrical characteristics (continued) t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units switching characteristics (note 2) t d(on) turn-on delay time q2 q1 11 11 20 20 ns t r turn-on rise time q2 q1 8 7 16 14 ns t d(off) turn-off delay time q2 q1 50 27 80 43 ns t f turn-off fall time v dd = 15 v, i d = 1 a, v gs = 10v, r gen = 6 ? q2 q1 17 4 31 8 ns q g total gate charge q2 q1 25 8 35 12 nc q gs gate-source charge q2 q1 6 3 nc q gd gate-drain charge q2: v ds = 15 v, i d = 7.9 a, v gs = 5 v q1: v ds = 15 v, i d = 6.5 a, v gs = 5 v q2 q1 7 3 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current q2 q1 2.3 1.3 a t rr reverse recovery time 25 ns q rr reverse recovery charge i f = 8.2 a, d if /d t = 300 a/s (note 3) q2 19 nc t rr reverse recovery time 23 ns q rr reverse recovery charge i f = 6.9 a, d if /d t = 100 a/s (note 3) q2 10 nc v sd drain-source diode forward voltage v gs = 0 v, i s = 2.3 a (note 2) v gs = 0 v, i s = 1.3 a (note 2) q2 q1 0.4 0.53 7 1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 78c/w when mounted on a 0.5in 2 pad of 2 oz copper b) 125c/w when mounted on a 0.02 in 2 pad of 2 oz copper c) 135c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% 3. see ?syncfet schottky body diode characteristics? below. fds6994s rev c (w) typical characteristics for q2 0 10 20 30 00.511.52 v ds , drain-source voltage (v) i d , drain current (a) 4.5v 3.5v v gs = 10v 3.0v 2.5v 0.8 1 1.2 1.4 1.6 0102030 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 3.0v 6.0v 10v 4.5v 3.5v 4.0v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 125 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 8.2a v gs = 10v 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 4.1a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 5 10 15 20 25 30 11.522.53 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = 5v 0.001 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fds6994s fds6994s rev c (w) typical characteristics for q2 0 2 4 6 8 10 0 1020304050 q g , gate charge (nc) v gs , gate-source voltage (v) i d =8.2a v ds = 10v 20v 15v 0 1000 2000 3000 4000 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms 100 ja = 135 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 135c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 135 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds6994s fds6994s rev c (w) typical characteristics for q1 0 5 10 15 20 00.511.52 v ds , drain to source voltage (v) i d , drain current (a) v gs = 10v 3.0v 3.5v 4.5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 5 10 15 20 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 3.5v 4.5v 6.0v 4.0v 10v figure 11. on-region characteristics. figure 12. on-resistance variation with drain current and gate voltage. 30 31 32 33 34 35 36 37 -50 -25 0 25 50 75 100 125 150 t a , ambient temperature ( o c) bv dss , drain-source breakdown voltage (v) i d = 250 a 0 0.025 0.05 0.075 246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 3.5a t a = 125 o c t a = 25 o c figure 13. on-resistance variation with temperature. figure 14. on-resistance variation with gate-to-source voltage. 0 5 10 15 20 1.5 2 2.5 3 3.5 4 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55c figure 15. transfer characteristics. figure 16. body diode forward voltage variation with source current and temperature. fds6994s fds6994s rev c (w) typical characteristics q1 0 1 2 3 4 5 0246810 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 6.9a v ds = 10v 15v 20v 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 17. gate charge characteristics. figure 18. capacitance characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms 100 ja = 135 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 135c/w t a = 25c figure 19. maximum safe operating area. figure 20. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective t ransient thermal resistance r ja (t) = r(t) * r ja r ja = 135 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 21. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds6994s fds6994s rev c (w) typical characteristics (continued) this section copied from fds6984s datasheet syncfet schottky body diode characteristics fairchild?s syncfet process embeds a schottky diode in parallel with powertrench mosfet. this diode exhibits similar characteristics to a discrete external schottky diode in parallel with a mosfet. figure 22 shows the reverse recovery characteristic of the fds6994s. figure 22. fds6994s syncfet body diode reverse recovery characteristic. for comparison purposes, figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size mosfet produced without syncfet (fds6690a). figure 23. non-syncfet (fds6690a) body diode reverse recovery characteristic. schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. this will increase the power in the device. 0.00001 0.0001 0.001 0.01 0.1 0 10 20 30 v ds , reverse voltage (v) i dss , reverse le akage current (a) 125 o c 25 o c figure 24. syncfet body diode reverse leakage versus drain-source voltage and temperature. fds6994s 10ns/div 3a/div 10ns/div 3a/div 0v !"#$ %"& '(% & % )'"% &' ! %*$%('( (! '&$$% "'+ '% ,'*- %& ''.$ '- '( $$ %+ !% !"'* %("& % % $% %( / 0 ! 11 2 2 34 5 1 23 45 11 3 45 1 1 1 2 1 3 21 6 2 7 1 21 11 2 1 21 11 23 2 $ 2 ( ( % 1 1 1 1 2 2 1 2 3 11 2 1 2 1 1 2 1 1 1 2 1 2 " $ $ ( $ !"# ! $ % & '( ) * + ,-./ , 0 " " "! "# ! 1+# ! % ! 0 #23 #24 #25 ( ( + # 6% 6 7 ! 0!$ 8! # ! 0!, 8 0! ,! 0 +$! '! |
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